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CHARGER-BASED MOS TRANSISTOR MODELING：THE EKV MODEL FOR LOW-POWER AND RF IC DESIGN
作者：
ENZ、VITTOZ
分類：
工業•工程
／
電子•電機
叢書系列：實用電子
出版社：
全華圖書
出版日期：2006/9/30
ISBN：047085541X
書籍編號：kk0159472
頁數：384
定價：
1200
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文字連結
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<a href='https://www.silkbook.com/book_detail.asp?goods_ser=kk0159472'>CHARGER-BASED MOS TRANSISTOR MODELING：THE EKV MODEL FOR LOW-POWER AND RF IC DESIGN</a>
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<a href='https://www.silkbook.com/book_detail.asp?goods_ser=kk0159472'><img src='https://www.silkbook.com/mall_image/bk/kk0159472.jpg' ALT='CHARGER-BASED MOS TRANSISTOR MODELING：THE EKV MODEL FOR LOW-POWER AND RF IC DESIGN' height='120' width='90'></a>
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<b><font color="#aa0000">內容簡介</font></b> Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. <b><font color="#aa0000">目錄</font></b> Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters.
圖解電磁學：從概念到
超圖解電動車的構造與
看圖學Python：
數位影像處理
資料結構：使用Pyt
Excel VBA快
OLED有機發光二極
MATLAB程式設計
放電魚小學堂：電從哪
圖解半導體：從設計、
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